Chih-Wei Lin Personal Website (NTHU PME Ph.D. Student)

Question 1. Create your own homework web page. Put all your homeworks (except homework #0) linked available on your webside. Email TA (Shih-Chi Chan at d917727@oz.nthu.edu.tw ) your homework web address with subject: PME5230HW.

Ans: As you see, this page is made for PME5230.

 

Question 2. Find two parters or less to work for the following. Some assigned literature survey topics are given as below.  Pick up ONE topic to write a report paper and a powerpoint file, and upload to your homework website

Ans:
Report Word file (Related Links), Report PowerPoint file (Related Links)

 

Questiono 3. Go to the MEMS Clearinghouse at ISI (mems.isi.edu). Click on "materials" and find the Young's modulus of bulk polysilicon and the range of the modulus of thin-film polysilicon and thin-film Silicon Nitride (Si3N4)

Bulk polysilicon (Related Links)
Property	Value	Conditions	Reference
Young's modulus	203 GPa	Values obtained by nanodentation at a load of 0.2 mN with indentation depth at peak load 24 nm.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's modulus	181 GPa	Values obtained by nanodentation at a load of 15 mN and indentation depth of 265 nm at peak load.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59

Polysilicon, film (Related Links)
Property	Value	Conditions	Reference
Young's modulus	201 GPa	LPCVD,n+type(phosphorous doped),obtained by nanodentation at a load of 0.2 mN and indentation depth of 25 nm at peak load.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's modulus	176 GPa	LPCVD,n+type(phosphorous doped),values obtained by nanodentation at a load of 15 mN and indentation depth of 289 nm at peak load.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's modulus	120 .. 180 GPa	In-situ B-doped ,for thickness upto 10um ,obtained by lateral resonant structure method.	IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347
Young's modulus	152 .. 171 GPa	Obtained from laser induced ultrasonic surface wave method for a thickness of 0.4-0.5 um,choosing an intermediate density.	Thin solid films 290-291(1996), p.309
Young's modulus	160 GPa	LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.	Sensors and Actuators,20(1989), p.138

Silicon Nitride (Si3N4), film (Related Links)
Property	Value	Conditions	Reference
Young's modulus	380 GPa	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Young's modulus	210 GPa	PECVD film grown on 0.2 um LPCVD Silicon Nitride film, calculated by using Load-Deflection of composite rectangular membranes,thickness=0.5 um.	Sensors and actuators,20(1989), p.138
Young's modulus	290 GPa	LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.	Sensors and Actuators,20(1989), p.138
Young's modulus	104 .. 156 GPa	Sputtered film,thickness=0.29 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um),assumi ng density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films.	IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249