PME5231 Homework Assignment #2

Assume substrate is p-type (100) Si and the others are polysilicon material.

Problem 1:

(a) Using Coventor to generate a set of masks to make above structure. (submit your mask file) (15%)

(b) Given processes with above masks to generate 3-D structure via using Coventor. (submit your 3-D figure file) (15%)

Problem 2: Given very thin metal layers on the bottom of cantilever and top of substrate to form electrodes. The metal layer is so thin to be ignored for it dynamics

compared with polysilicon structure.

(a) Using Coventor to simulate the max displacement of plate for an

applied voltage of 100 Volts. (Submit the figure file) (35%)

(b) Using Coventor to simulate the max displacements of plate vs applied voltage of 10 Volts, 100 Volts, 150 Volts, 160 Volts. (Submit the displacement table) (35%)

Ans：

Problem 1：

(a) Figure of a set of masks

(b) Figure of 3-D model

Table of process

Problem 2：

(a) Table of maximum displacement of plate for an applied voltage of 40 Volts

Figure of maximum displacement of plate for an applied voltage of 40 Volts

Table of MechDomain

(b) Table of pull-in voltage

Figure of pull-in voltage

這一次的作業，因為每次電壓大於50伏特以上時，皆會有錯誤產生。所以自己將電壓降至40伏特，所模擬出來的結果都滿符合其物理意義且不會有任何錯誤訊息產生。而pull-in的電壓是大約在46.5~46.75之間。我們模擬出來的結果與助教們之前所說的結果有很大差異，我想是在有些設定上的差異所在。

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