Property

1. List of MEMS Milestones

Do Web and Journal literature search to answer following questions-

Question A- For history from 1980 to 2002 shown on above, please find 5 additional

milestones that you think should be on the list. List reference, and briefly explain

why your choice belongs on the list. (20%)

Question B- Please find some reference for age of Bio-MEMS and Optical fiber

switches and give your supporting statements or arguments. (20%)

ANS：

Question A

1982 “Silicon as a Mechanical Material” (K. Petersen, IEEE Trans. 70)

1983 Integrated pressure sensor (Honeywell)

1985 LIGA (W. Ehrfeld et al.)

1986 Silicon wafer bonding (M. Shimbo)

1988 First MEMS conference

1992 Bulk micromachining (SCREAM process, Cornell)

現今的晶圓都是由矽所組成，所以矽自然成為微機電不可缺少的元素之一。而有關LIGA製程方面，此製程可以產生高深寬比的結構。另外，關於體型微加工技術和接合技術更是在做製程時所不可或缺的二個關鍵技術。如此重要的相關技術，可以將原本複雜的結構，簡化成幾到製程即可做出。另外，也可將原本不可能做出的結構，經過體型微加工、LIGA和接合技術互相輔助後，便可做出其結構。如此將微機電製程技術向前推進了一大步，因此我覺得以上列出的六大項是可當作里程碑來看待。

http://toshi.fujita3.iis.u-tokyo.ac.jp/research_project/optical_MEMS/1_Introduction.pdf

http://arri.uta.edu/acs/jmireles/MEMSclass/lecture1.pdf

Question B

l Bio-MEMS

http://www.eas.asu.edu/~nsf2000/Table_of_Contents/AL.pdf

Polla, D.L., “ BioMEMS applications in medicine”, MHS 2001. Proceedings of 2001 International Symposium on, Page(s): 13 –15, 2001

Ahn, C.H., “ Portable biochemical detection systems using microfluidic and BioMEMS devices”, Microprocesses and Nanotechnology Conference, Page(s): 16 –17, 2001

Gadre, A.; et al., “An integrated BioMEMS fabrication technology”, Semiconductor Device Research Symposium, Page(s): 186 -189, 2001

Okandan, M.; et al., “BioMEMS and microfluidics applications of surface micromachining technology”, Microelectromechanical Systems Conference, Page(s): 1 -3, 2001

Wu, Jian; et al., “The glucose sensor integratable in the microchannel”, Sensors and Actuators, Volume: 78, Issue: 1-3, August 30, pp. 221-227, 2001,

由上面所列的參考資料得知，可結合生物與微機電製程技術創造出生物感測器來檢驗人身上是否患有疾病，以便即早知道，即早治療。而且在微流體通道中的感測器從發酵膜對葡萄糖的感測器，用微機械的電解技術製造，這個感測器，有一些微小孔陣列，並用蝕刻穿過矽膜，在這個微小孔上，是一個葡萄糖氧化酵素膜，由於工作電極的分開以及酵膜被層積在上面，使得這個標準的MUMPs可以完成整個製造，這個酵膜將被沉澱在最後一個過程中，這可以避免不相容的問題在MUMPs和生物量之間，在這個葡萄糖感測器可以很容易被整合在微小通道中，當直徑和微小孔的深度比是1時，在大多數製造過氧化氫可以用工作電極在周圍氧化。因此生物微機電可應用面的是相當寬廣地。

l Optical fiber switches

Field, L.A.; et al., ”Micromachined 1 × 2 optical-fiber switch”, Sensors and Actuators, Volume: 53, Issue: 1-3, May, pp. 311-315, 1996

這篇論文是描述一個1×2的熱致動光纖開關器，這個開關包含了一層很厚的電鍍鎳致動器並且可以去去移動單一模式的光纖，而且利用矽蝕刻挖一個非等向性的溝渠為了組裝的發送和接收，這個開關的作動是很有趣的，所以我選擇這一篇論文來說明光纖開關。

2. (30%)Go to the MEMS Clearinghouse at ISI (mems.isi.edu). Click on

"materials" and find

(1) The Young's modulus of bulk polysilicon and the range of the modulus of

thin-film polysilicon and thin-film Silicon Nitride (Si3N4). (list the reference

source)

(2) A method for wet etching (a) Silicon (b) Silicon Oxide (c) Silicon Nitride (d)

(3) A method for dry etching (a) Silicon (b) Silicon Oxide (c) Silicon Nitride

ANS：

(1) The Young's modulus of bulk polysilicon

Property	Value	Conditions	Reference
Young's Modulus	203 GPa	Values obtained by nanodentation at a load of 0.2 mN with indentation depth at peak load 24 nm.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's Modulus	181 GPa	Values obtained by nanodentation at a load of 15 mN and indentation depth of 265 nm at peak load.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59

The range of the modulus of thin-film polysilicon

Property	Value	Conditions	Reference
Young's Modulus	201 GPa	LPCVD,n+type(phosphorous doped),obtained by nanodentation at a load of 0.2 mN and indentation depth of 25 nm at peak load.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's Modulus	176 GPa	LPCVD,n+type(phosphorous doped),values obtained by nanodentation at a load of 15 mN and indentation depth of 289 nm at peak load.	J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's Modulus	120 .. 180 GPa	In-situ B-doped ,for thickness upto 10um ,obtained by lateral resonant structure method.	IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347
Young's Modulus	152 .. 171 GPa	Obtained from laser induced ultrasonic surface wave method for a thickness of 0.4-0.5 um,choosing an intermediate density.	Thin solid films 290-291(1996), p.309
Young's Modulus	160 GPa	LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.	Sensors and Actuators,20(1989), p.138

The range of the modulus of thin-film Silicon Nitride (Si3N4)

Property	Value	Conditions	Reference
Young's Modulus	380 GPa	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Young's Modulus	210 GPa	PECVD film grown on 0.2 um LPCVD Silicon Nitride film, calculated by using Load-Deflection of composite rectangular membranes,thickness=0.5 um.	Sensors and actuators,20(1989), p.138
Young's Modulus	290 GPa	LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.	Sensors and Actuators,20(1989), p.138
Young's Modulus	104 .. 156 GPa	Sputtered film,thickness=0.29 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um),assumi ng density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films.	IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249